mos field effect transistor description the 2SJ449 is p-channel mos field effect transistor de- signed for high voltage switching applications. features ? low on-resistance r ds(on) = 0.8 w max. (@ v gs = C10 v, i d = C3.0 a) ? low c iss c iss = 1040 pf typ. ? high avalanche capability ratings ? isolated to-220 package absolute maximum ratings (t a = 25 ?c) drain to source voltage v dss C250 v gate to source voltage v gss m 30 v drain current (dc) i d(dc) m 6.0 a drain current (pulse) * i d(pulse) m 24 a total power dissipation (t c = 25 ?c) p t1 35 w total power dissipation (t a = 25 ?c) p t2 2.0 w channel temperature t ch 150 ?c storage temperature t stg C55 to +150 ?c single avalanche current ** i as C6.0 a single avalanche energy ** e as 180 mj * pw 10 m s, duty cycle 1 % ** starting t ch = 25 ?c, r g = 25 w , v gs = C20 v ? 0 2SJ449 switching p-channel power mos fet industrial use document no. d10030ej1v0ds00 date published may 1995 p printed in japan 1995 data sheet drain source body diode gate mp-45f(isolated to-220) 10.0 ?.3 3.2 ?.2 4.5 ?.2 2.7 ?.2 15.0 ?.3 3 ?.1 12.0 ?.2 13.5 min. 4 ?.2 1.3 ?.2 1.5 ?.2 2.54 2.54 0.7 ?.1 0.65 ?.1 2.5 ?.1 123 1. gate 2. drain 3. source package dimensions (in millimeters)
2SJ449 2 the application circuits and their parameters are for references only and are not intended for use in actual design-in's. electrical characteristics (t a = 25 ?c) characteristic symbol min. typ. max. test conditions drain to source on-resistance r ds(on) 0.55 0.8 v gs = C10 v, i d = C3.0 a gate to source cutoff voltage v gs(off) C4.0 C4.8 C5.5 v ds = C10 v, i d = C1 ma forward transfer admittance | y fs | 2.0 3.5 v ds = C10 v, i d = C3.0 a drain leakage current i dss C100 v ds = C250 v, v gs = 0 gate to source leakage current i gss m 100 v gs = m 30 v, v ds = 0 input capacitance c iss 1040 v ds = C10 v output capacitance c oss 360 v gs = 0 reverse transfer capacitance c rss 70 f = 1 mhz turn-on delay time t d(on) 24 i d = C3.0 a rise time t r 16 v gs(on) = C10 v turn-off delay time t d(off) 47 v dd = C125 v fall time t f 14 r g = 10 w , r l = 42 w total gate charge q g 23.1 i d = C6.0 a gate to source charge q gs 7.1 v dd = C200 v gate to drain charge q gd 12.9 v gs = C10 v body diode forward voltage v f(s-d) 0.92 i f = C6.0 a, v gs = 0 reverse recovery time t rr 155 i f = C6.0 a, v gs = 0 reverse recovery charge q rr 930 di/dt = 50 a/ m s test circuit 1 avalanche capability test circuit 2 switching time r g = 25 w 50 w pg l v dd v gs = ?0 0 v bv dss i as i d v ds starting t ch r g = 10 w d.u.t. pg. 0 t r l v dd v gs t = 1 s duty cycle 1 % i d 0 0 10 % 10 % 90 % 90 % 10 % 90 % i d v gs (on) t d (off) t d (on) t on t off t f t r test circuit 3 gate charge d.u.t. r l v dd 50 w i g = ? ma pg. v dd v gs r g d.u.t. v gs wave form i d wave form m unit w v s m a na pf pf pf ns ns ns ns nc nc nc v ns nc
2SJ449 3 typical characteristics (t a = 25 ?c) forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a forward transfer characteristics v gs - gate to source volta g e - v i d - drain current - a ?.1 derating factor of forward bias safe operating area t c - case temperature - ?c dt - percentage of rated power - % total power dissipation vs. case temperature t c - case temperature - ?c p t - total power dissipation - w 0 20 0 20 40 60 80 100 120 140 160 20 40 60 80 100 40 60 80 100 120 140 160 35 30 25 20 15 10 5 ?.1 ?.0 ?.0 ?0 ?00 ?0 ?00 ?000 t c = 25 ?c single pulse 0 ?0 ?5 ?0 ?5 ?.0 ?0 ?00 pulsed ?0 ? 0 1 ms power dissipation limited r ds(on) limited (at v gs = ?0 v) pulsed i d(dc) 10 ms t a = ?5 ?c 25 ?c 75 ?c 125 ?c ? ?0 dc 100 ms v gs = ?0 v ?0 v pw = 100 s ? ? ?2 ?6 v ds = ?0 v m i d(pulse)
2SJ449 4 transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ?c/w forward transfer admittance vs. drain current i d - drain current - a |y fs | - forward transfer admittance - s drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - w 0 ? drain to source on-state resistance vs. drain current gate to source cutoff voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate to source cutoff voltage - v i d - drain current - a r ds(on) - drain to source on-state resistance - w 0.5 ?.0 10 0.001 0.01 0.1 1 100 1 000 1 m 10 m 100 m 1 10 100 1 000 10 100 v ds = ?0 v pulsed ?.0 1.0 10 100 ?0 ?00 0.5 1.5 ?0 ?5 pulsed 1.0 ?0 ?00 pulsed single pulse 0 1.5 ?.0 v ds = ?0 v i d = ? ma ?.0 ?.0 ?.0 ?0 0 50 100 150 0 r th(ch-a) = 62.5 ?c/w r th(ch-c) = 3.57 ?c/w 0.1 1.0 v gs = ?0 v ?0 v mm ?.1 i d = ? a ? a ?.2 a t a = ?5 ?c 25 ?c 75 ?c 125 ?c
2SJ449 5 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ?c r ds(on) - drain to source on-state resistance - w source to drain diode forward voltage v sd - source to drain voltage - v i sd - diode forward current - a capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 1.0 ?.1 0 ?0 0.5 1.0 1.5 0 50 100 150 i d = ? a 0.1 0 1 10 100 0.5 pulsed 10 ?.0 100 1 000 10 000 ?0 ?00 ? 000 v gs = 0 f = 1 mhz 10 100 1 000 ?.0 ?0 ?00 v gs - gate to source voltage - v reverse recovery time vs. drain current i d - drain current - a t rr - reverse recovery time - ns di/dt = 50 a/ s v gs = 0 m 1.0 0.1 10 100 1000 1.0 10 100 1.0 1.5 2.0 v dd = ?25 v v gs = ?0 v r g = 10 w dynamic input/output characteristics q g - gate char g e - nc v ds - drain to source voltage - v 0 10 20 30 40 -100 -200 -300 -400 i d = ? a ? ?0 ?5 ?0 v gs = ?0 v c rss c oss c iss tr t d(on) t f t d(off) 0 v dd = ?00 v ?25 v ?0 v v gs = 0 v 10 v
2SJ449 6 single avalanche current vs. inductive load l - inductive load - h i as - single avalanche current - a single avalanche energy derating factor starting tch - starting channel temperature - ?c energy derating factor - % ?.0 0 25 ?0 ?00 100 1 m 10 m 100 m v dd = ?25 v v gs = ?0 v 0 r g = 25 w 20 80 120 160 50 75 100 125 150 v dd = ?25 v r g = 25 w v gs = ?0 v 0 i as < = ? a 100 60 40 140 e as = 180 mj i d = ? a m ?.1
2SJ449 7 reference document name document no. nec semiconductor device reliability/quality control system. tei-1202 quality grade on nec semiconductor devices. iei-1209 semiconductor device mounting technology manual. iei-1207 semiconductor device package manual. iei-1213 guide to quality assurance for semiconductor devices. mei-1202 semiconductor selection guide. mf-1134 power mos fet features and application switching power supply. tea-1034 application circuits using power mos fet. tea-1035 safe operating area of power mos fet. tea-1037 the diode connected between the gate and source of the transistor serves as a protector against esd. when this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2SJ449 8 [memo] no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: standard, special, and specific. the specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices in standard unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 94.11
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